SEM Lab, Inc. recently announced a new capability for measurement of thin film layer thickness using EDS data. This post shows an example where the aluminum bond pad thickness and the underlying Ti-W barrier metal layer thickness are measured simultaneously on a silicon IC device. Fig. A shows the EDS spectra of three bond pads on the device. Fig. B shows the layer thickness values for two different devices (A & B) at three different bond pads (1, 2, & 3).
Fig. A – EDS spectra of three bond pads on a device die.
Fig. B – Layer thickness values for two different devices (A & B) at three different bond pads (1, 2, & 3).
The ability to measure the aluminum bond pad thickness and the underlying Ti-W barrier metal layer thickness simultaneously makes this a very efficient method for characterizing IC devices.