Vaporized Bond Wires and a Melted Drain Reveal Severe Overcurrent

What the evidence preview establishes

The evidence supported an electrical-overstress event involving the primary power transistor and possibly a nearby device. Missing gate features suggested that gate-source breakdown may have initiated a subsequent source-drain overcurrent condition.

Why this case matters

Use damage geometry to reconstruct power-semiconductor failure sequence. Gate destruction can precede a much larger source-drain overcurrent event, so circuit review should address both the initiating gate stress and the energy available afterward.