A Dual Operational Amplifier IC was submitted for failure analysis.
This is an optical image of the device.
This is a BSE SEM image of the device after chemical decapsulation.
This is a higher magnification image of the device die.
This is electrical over-stress damage associated with an output, OUT2.
This is an elemental dot map that shows aluminum exposed through the passivation layer in the damaged areas.
The analysis results suggested that the device failed on OUT2 due to a high voltage transient event on the OUT2 signal.