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Electrical Overstress

IC Die-Level EOS

Localized electrical overstress damage in the output region of an integrated-circuit die, with enough surrounding geometry visible to preserve metallization context.

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Scale 100 um scale shown
Observed feature Localized EOS damage near bond-pad and metallization features
Likely mechanism Electrical overstress causing destructive localized heating in the output path
IC die-level EOS damage near output metallization

Interpretation

Why this image matters

This image is one of the strongest current SEM Lab examples of die-level electrical overstress because it preserves enough surrounding die geometry to show where the damage sits relative to the output-region metallization.

The underlying report concluded that the devices failed due to EOS damage of one or both outputs, with the visible damage consistent with either an output-to-VCC short-circuit condition or a high transient voltage on the output.

For teaching use, this makes the image especially valuable as a primary-site interpretation reference rather than just a dramatic thermal-aftermath figure.

eos ic-die metallization output-damage
Use this when

Best comparison value

  • Teaching die-region EOS versus generic burn damage
  • Discussing localized primary electrical damage
  • Showing that context around the damaged site still matters
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